2SC5085-O(TE85L,F)
RF TRANS NPN 12V 7GHZ USMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage 2SC5085-O-TE85L-F- is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It features a transition frequency of 7GHz and delivers a typical gain of 1dB at 500MHz with a noise figure of 1dB at the same frequency. The device is rated for a maximum power dissipation of 100mW and has a DC current gain (hFE) of at least 80 at 20mA and 10V.
The 2SC5085-O-TE85L-F- is housed in an SC-70 (SOT-323) surface-mount package, supplied on tape and reel. It is suitable for operation in environments with ambient temperatures up to 125°C (TJ). This transistor is commonly utilized in wireless communication systems, RF amplification circuits, and other demanding radio frequency designs across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | - |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Supplier Device Package | SC-70 |
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