2SC5084-O(TE85L,F)
RF TRANS NPN 12V 7GHZ SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage 2SC5084-O-TE85L-F- NPN RF Transistor, designed for high-frequency applications. This device features a 12V collector-emitter breakdown voltage and a maximum collector current of 80mA. With a transition frequency of 7GHz and a typical gain of 11dB, it is well-suited for RF amplification stages. The noise figure is rated at 1.1dB at 1GHz. This component is housed in an S-Mini (TO-236-3, SC-59, SOT-23-3) surface-mount package and operates at temperatures up to 125°C. It is supplied on a tape and reel. Applications include wireless infrastructure and consumer electronics requiring high-frequency performance.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 11dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | S-Mini |