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2SC5066-O,LF

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2SC5066-O,LF

RF TRANS NPN 12V 7GHZ SSM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage 2SC5066-O-LF is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a transition frequency of 7GHz and a power dissipation of 100mW, it is suitable for demanding RF circuitry. The device exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a typical noise figure of 1dB at 500MHz. The 2SC5066-O-LF is provided in a surface mountable SSM package (SC-75, SOT-416) and is supplied on tape and reel for automated assembly. This transistor is utilized in wireless communication systems and other high-frequency electronic equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Gain-
Power - Max100mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 500MHz
Supplier Device PackageSSM

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