2SC5066-O,LF
RF TRANS NPN 12V 7GHZ SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage 2SC5066-O-LF is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a transition frequency of 7GHz and a power dissipation of 100mW, it is suitable for demanding RF circuitry. The device exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a typical noise figure of 1dB at 500MHz. The 2SC5066-O-LF is provided in a surface mountable SSM package (SC-75, SOT-416) and is supplied on tape and reel for automated assembly. This transistor is utilized in wireless communication systems and other high-frequency electronic equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | - |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Supplier Device Package | SSM |
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