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2SC5065-O(TE85L,F)

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2SC5065-O(TE85L,F)

RF TRANS NPN 12V 7GHZ USM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5065-O-TE85L-F-. This bipolar RF transistor is designed for high-frequency applications, operating with a collector-emitter breakdown voltage of 12V and a maximum collector current of 30mA. It features a high transition frequency of 7GHz and a power dissipation of 100mW. The device exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a typical noise figure of 1dB at 500MHz. Packaged in an SC-70 (SOT-323) surface-mount configuration, this component is supplied in tape and reel. It is suitable for use in wireless communication systems and other RF front-end circuitry. The operating temperature range extends to 125°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Gain-
Power - Max100mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 500MHz
Supplier Device PackageSC-70

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