2SC4215-O(TE85L,F)
RF TRANS NPN 30V 550MHZ USMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC4215-O-TE85L-F-. This surface mount component is designed for RF applications, featuring a 30V collector-emitter breakdown voltage and a transition frequency of 550MHz. The transistor operates with a maximum collector current of 20mA and dissipates a maximum power of 100mW. It exhibits a minimum DC current gain of 40 at 1mA and 6V, with a typical gain of 23dB. The noise figure is rated at 5dB at 100MHz. Supplied in an SC-70 (SOT-323) package on tape and reel, this component is suitable for use in telecommunications, consumer electronics, and industrial equipment. The operating temperature range extends to 125°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 23dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1mA, 6V |
| Frequency - Transition | 550MHz |
| Noise Figure (dB Typ @ f) | 5dB @ 100MHz |
| Supplier Device Package | SC-70 |
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