TMS4003JR
Standard SRAM, 256X1, MOS, CDIP40Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments TMS4003JR is a standard asynchronous SRAM memory device from the TMS4003 series. This component features a 256 x 1 memory organization, utilizing MOS technology. The device is housed in a 40-pin CDIP (Ceramic Dual In-line Package) with a terminal pitch of 2.54mm. Operating across an industrial temperature range of -55°C to +85°C, the TMS4003JR is suitable for applications in industrial control, telecommunications, and legacy systems requiring reliable, high-speed data storage. Its through-hole mounting and parallel interface facilitate integration into established board designs.
Additional Information
Series: TMS4003RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| JESD_30_Code | R-XDIP-T40 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X1 |
| Memory_Width | 1 |
| Number_of_Terminals | 40 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP40,.6 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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