TMS2150ADWR
Cache Tag SRAM, 512X8, 35ns, NMOS, PDSO24Manufacturer: Texas Instruments
Categories: SRAMs
Quality Control: Learn More
The Texas Instruments TMS2150ADWR is an asynchronous Cache Tag SRAM with a memory organization of 512 words by 8 bits, providing a total density of 4 Kbits. This NMOS technology component features a maximum access time of 35ns. Housed in a 24-pin PDSO (Plastic Small Outline) package with a 1.27mm terminal pitch, it supports surface mounting. The operating supply voltage ranges from 4.5V to 5.5V, with a nominal value of 5V. Its operating temperature range is 0°C to 70°C. This component is suitable for applications in computing and data processing systems.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 15.4000 |
| Width | 7.5000 |
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-PDSO-G24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOP |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.6500 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TMS2150ANT
Cache Tag SRAM, 512X8, 35ns, NMOS, PDIP24
TMS2150-3DWR
Cache Tag SRAM, 512X8, 35ns, NMOS, PDSO24
TMS2150-3DW
Cache Tag SRAM, 512X8, 35ns, NMOS, PDSO24