TMS2150-5JD
Cache Tag SRAM, 512X8, 55ns, NMOS, CDIP24Manufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments TMS2150-5JD is a Cache Tag SRAM featuring a 512x8 organization with a maximum access time of 55ns. This NMOS technology component, part of the TMS2150 series, is housed in a 24-pin CDIP (R-CDIP-T24) package. Designed for asynchronous operation, it offers a memory density of 4096 bits and operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. The output characteristics are Totem Pole, and it supports parallel data transfer. This component is suitable for applications within the computing and telecommunications industries.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Time_Max | 55.0000000000000000 |
| JESD_30_Code | R-CDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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