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TMS2150-5DW

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TMS2150-5DW

Cache Tag SRAM, 512X8, 55ns, NMOS, PDSO24

Manufacturer: Texas Instruments

Categories: SRAMs

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The Texas Instruments TMS2150-5DW is a 4Kb Cache Tag Static Random-Access Memory (SRAM) device from the TMS2150 series. This component features a 512 x 8 memory organization, providing 8-bit data width. It operates asynchronously with a maximum access time of 55ns. Manufactured using NMOS technology, this device is supplied in a 24-lead PDSO (Plastic Small Outline) package, designated R-PDSO-G24, with a terminal pitch of 1.27mm. The operating temperature range is from 0°C to 70°C, with a supply voltage range of 4.5V to 5.5V. This SRAM is suitable for applications within the computing and telecommunications industries.

Additional Information

Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length15.4000
Width7.5000
TechnologyNMOS
Access_Time_Max55.0000000000000000
JESD_30_CodeR-PDSO-G24
Memory_Density4096.0000000000000000
Memory_IC_TypeCACHE TAG SRAM
Memory_Organization512X8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words512.0000000000000000
Number_of_Words_Code512
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_CharacteristicsTotem Pole
Output_EnableNo
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Seated_Height_Max2.6500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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