TMS2150-4NT
Cache Tag SRAM, 512X8, 45ns, NMOS, PDIP24Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments TMS2150 Series Cache Tag SRAM, part number TMS2150-4NT, is a 512x8 asynchronous NMOS memory component. This device features a maximum access time of 45ns and operates within a supply voltage range of 4.5V to 5.5V. The memory organization is 512 words by 8 bits, providing a total memory density of 4096 bits. Packaged in a 24-pin PDIP (R-PDIP-T24) with through-hole termination, it is suitable for applications requiring rapid data lookup. This component finds utility in systems such as data processing, networking equipment, and embedded control systems where fast cache memory is critical. The operating temperature range is 0°C to 70°C.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 31.6400 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-PDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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