TMS2150-4JD
Cache Tag SRAM, 512X8, 45ns, NMOS, CDIP24Manufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments TMS2150-4JD is a Cache Tag SRAM with a memory organization of 512 words by 8 bits. This asynchronous NMOS device offers a memory density of 4096 bits and an access time maximum of 45 nanoseconds. It features a parallel interface and operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. The TMS2150 series component is housed in a 24-lead CDIP package (JESD-30 Code R-CDIP-T24) with through-hole mounting. Its output characteristics are Totem Pole. This component is suitable for applications within the computing and telecommunications industries.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-CDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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