TMS2150-4DW
Cache Tag SRAM, 512X8, 45ns, NMOS, PDSO24Manufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments TMS2150 series Cache Tag SRAM, specifically the TMS2150-4DW, offers a 512x8 memory organization with a 45ns maximum access time. Fabricated using NMOS technology, this component is housed in a 24-lead PDSO (Small Outline) package, featuring a rectangular outline with gull wing terminals on a 1.27mm pitch. Its asynchronous operating mode and totem pole output characteristics are suitable for high-speed memory buffering applications. The device operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V, and has an operating temperature range of 0°C to 70°C. This SRAM is commonly utilized in computing and data processing systems requiring efficient cache memory solutions.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 15.4000 |
| Width | 7.5000 |
| Technology | NMOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-PDSO-G24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOP |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.6500 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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