TMS2150-3NT
Cache Tag SRAM, 512X8, 35ns, NMOS, PDIP24Manufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments TMS2150 series offers a 4Kb Cache Tag SRAM, specifically the TMS2150-3NT. This NMOS device features a 512x8 memory organization, providing 512 words of 8-bit data. With a maximum access time of 35ns, it operates asynchronously and utilizes a totem pole output characteristic. The TMS2150-3NT is housed in a 24-pin PDIP (R-PDIP-T24) package with through-hole mounting and a 2.54mm terminal pitch. Operating within a supply voltage range of 4.5V to 5.5V, this component is suitable for applications in telecommunications and data processing systems where high-speed cache memory is critical. Its robust NMOS technology ensures reliable performance in demanding environments.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 31.6400 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-PDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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