TMS2150-3JD
Cache Tag SRAM, 512X8, 35ns, NMOS, CDIP24Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments TMS2150 series Cache Tag SRAM, part number TMS2150-3JD, offers a 512 x 8 memory organization with a maximum access time of 35ns. This NMOS technology component operates asynchronously and features a Totem Pole output characteristic. Encased in a 24-lead Ceramic Dual In-line Package (CDIP) with through-hole termination, it is designed for a supply voltage range of 4.5V to 5.5V, with a nominal 5V. The TMS2150-3JD is suitable for applications requiring high-speed cache memory, commonly found in computing systems and telecommunications infrastructure. Its 4096-bit density and robust construction ensure reliable performance within its specified operating temperature range of 0°C to 70°C.
Additional Information
Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-CDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | CACHE TAG SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Totem Pole |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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