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TMS2150-3DW

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TMS2150-3DW

Cache Tag SRAM, 512X8, 35ns, NMOS, PDSO24

Manufacturer: Texas Instruments

Categories: SRAMs

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Texas Instruments TMS2150-3DW is a 512 x 8 Cache Tag SRAM, offering a maximum access time of 35ns. This NMOS technology device operates asynchronously with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V. The memory organization is 512 words by 8 bits, providing a total memory density of 4 Kbits. Featuring a 24-lead PDSO (R-PDSO-G24) package with a terminal pitch of 1.27mm, this surface-mount component is suitable for applications requiring high-speed data buffering and addressing. Its typical applications span computing systems and data communication infrastructure. The operating temperature range is from 0°C to 70°C.

Additional Information

Series: TMS2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length15.4000
Width7.5000
TechnologyNMOS
Access_Time_Max35.0000000000000000
JESD_30_CodeR-PDSO-G24
Memory_Density4096.0000000000000000
Memory_IC_TypeCACHE TAG SRAM
Memory_Organization512X8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words512.0000000000000000
Number_of_Words_Code512
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_CharacteristicsTotem Pole
Output_EnableNo
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Seated_Height_Max2.6500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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