TMS2149-3NL
Standard SRAM, 1KX4, 35ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments TMS2149-3NL is a standard 4Kb static random-access memory (SRAM) device with a 1K x 4 memory organization. This asynchronous MOS memory features a maximum access time of 35ns and a 3-state output characteristic. The TMS2149 series component operates with a supply voltage range of 4.5V to 5.5V, with a nominal supply of 5V. It is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting. Applicable to industrial and consumer electronics, this component offers a parallel interface and a standby current specification of 120mA maximum. The operating temperature range for this component is 0°C to 70°C.
Additional Information
Series: TMS2149RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 35.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 120.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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