TMS2147H-4JL
Standard SRAM, 4KX1, 45ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments TMS2147H-4JL is a 4096-word x 1-bit standard Static Random Access Memory (SRAM) designed for high-speed data storage applications. This asynchronous MOS memory boasts a maximum access time of 45ns, catering to demanding system requirements. The TMS2147 series component features separate I/O, 3-state outputs, and operates from a nominal supply voltage of 5V. Its 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting and a 2.54mm terminal pitch ensures robust integration into established board designs. This component finds application in industrial control systems, telecommunications equipment, and legacy computing platforms requiring reliable, high-density memory solutions. The device operates within a temperature range of 0°C to 70°C.
Additional Information
Series: TMS2147RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 45.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 120.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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