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SN74ACT2164-18FM

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SN74ACT2164-18FM

Cache Tag SRAM, 16KX5, 18ns, CMOS, PQCC32

Manufacturer: Texas Instruments

Categories: SRAMs

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Texas Instruments SN74ACT2164-18FM is a high-speed Cache Tag SRAM with a memory organization of 16K words by 5 bits, providing a total density of 81,920 bits. This CMOS device features an access time of 18 nanoseconds and operates asynchronously. The component is housed in a 32-terminal PQCCJ (R-PQCC-J32) package, suitable for surface mounting with its J-bend terminals. It supports a supply voltage range of 4.75V to 5.25V, with a nominal voltage of 5V. Typical applications for this type of memory component include high-performance computing, networking infrastructure, and data storage systems. The SN74ACT2164-18FM offers 3-state output characteristics for flexible system integration.

Additional Information

Series: 74ACT2164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max18.0000000000000000
JESD_30_CodeR-PQCC-J32
Memory_Density81920.0000000000000000
Memory_IC_TypeCACHE TAG SRAM
Memory_Organization16KX5
Memory_Width5
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals32
Number_of_Words16384.0000000000000000
Number_of_Words_Code16k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableNo
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC32,.5X.6
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Standby_Current_Max0.150000000000000
Supply_Current_Max180.000000000000000
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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