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SN74ACT2150A-30JD

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SN74ACT2150A-30JD

Cache Tag SRAM, 512X8, 30ns, CMOS, CDIP24

Manufacturer: Texas Instruments

Categories: SRAMs

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The Texas Instruments SN74ACT2150A-30JD is a 512 x 8 bit Cache Tag SRAM utilizing advanced CMOS technology. This component offers a maximum access time of 30 ns and operates asynchronously. Designed with a dual in-line package (DIP) featuring 24 through-hole terminals on a 2.54 mm pitch, it is suitable for applications requiring robust ceramic, metal-sealed cofired construction. The SN74ACT2150A-30JD is engineered for high-speed data path and control applications, commonly found in computing systems, telecommunications infrastructure, and industrial automation. Its reliable totem pole output characteristics and 4.5V to 5.5V supply voltage range ensure compatibility with standard logic levels. The memory organization provides 512 words with an 8-bit width, ideal for implementing tag arrays in memory management units.

Additional Information

Series: 74ACT2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max30.0000000000000000
JESD_30_CodeR-CDIP-T24
Memory_Density4096.0000000000000000
Memory_IC_TypeCACHE TAG SRAM
Memory_Organization512X8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words512.0000000000000000
Number_of_Words_Code512
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_CharacteristicsTotem Pole
Output_EnableNo
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_Equivalence_CodeDIP24,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Standby_Current_Max0.095000000000000
Supply_Current_Max95.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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