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SN74ACT2150A-20JD

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SN74ACT2150A-20JD

Cache Tag SRAM, 512X8, 20ns, CMOS, CDIP24

Manufacturer: Texas Instruments

Categories: SRAMs

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The Texas Instruments SN74ACT2150A-20JD is a high-speed cache tag SRAM with a memory organization of 512 words by 8 bits, providing a total density of 4096 bits. This CMOS component features an asynchronous operating mode and a maximum access time of 20ns, ensuring rapid data retrieval. Designed for through-hole mounting, it is housed in a 24-lead ceramic dual in-line package (CDIP24). The device operates with a supply voltage range of 4.5V to 5.5V and has a nominal supply voltage of 5V. Its output characteristics are totem pole, and it is suitable for applications requiring fast memory access in industrial, consumer, and telecommunications systems. The SN74ACT2150A-20JD offers a parallel interface for efficient data transfer.

Additional Information

Series: 74ACT2150RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max20.0000000000000000
JESD_30_CodeR-CDIP-T24
Memory_Density4096.0000000000000000
Memory_IC_TypeCACHE TAG SRAM
Memory_Organization512X8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words512.0000000000000000
Number_of_Words_Code512
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_CharacteristicsTotem Pole
Output_EnableNo
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_Equivalence_CodeDIP24,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Standby_Current_Max0.095000000000000
Supply_Current_Max95.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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