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SN74ACT2140AFN

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SN74ACT2140AFN

Cache SRAM, 8KX18, 25ns, CMOS, PQCC52

Manufacturer: Texas Instruments

Categories: SRAMs

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The Texas Instruments SN74ACT2140AFN is a high-speed CMOS cache SRAM with an 8K x 18 memory organization. Featuring a maximum access time of 25ns, this component operates asynchronously and supports 3-state outputs with an output enable function. The device is configurable as either 2-way 4K x 18 or directly mapped 8K x 18. It is housed in a 52-terminal J-lead chip carrier (PQCC52) package, designed for surface mounting. Operating within a supply voltage range of 4.75V to 5.25V, the SN74ACT2140AFN is suitable for applications requiring fast data buffering and high-bandwidth memory access, commonly found in networking infrastructure, telecommunications, and high-performance computing systems. The operating temperature range is from 0°C to 70°C.

Additional Information

Series: 74ACT2140RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length19.1262
Width19.1262
TechnologyCMOS
Access_Time_Max25.0000000000000000
Additional_FeatureCONFIGURED AS 2-WAY 4K X 18 OR DIRECT MAPPED 8K X 18
JESD_30_CodeS-PQCC-J52
Memory_Density147456.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization8KX18
Memory_Width18
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals52
Number_of_Words8192.0000000000000000
Number_of_Words_Code8k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_ShapeSquare
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Seated_Height_Max4.5700
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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