MM54C910J
Standard SRAM, 64X4, 860ns, TTL, CDIP18Manufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments MM54C910J is a standard SRAM with a memory organization of 64 words by 4 bits, providing a total memory density of 256 bits. This asynchronous memory component operates with TTL technology and features a maximum access time of 860ns. It is housed in an 18-lead Ceramic Dual In-line Package (CDIP) with through-hole termination, suitable for applications requiring robust environmental resistance with a wide operating temperature range of -55°C to 125°C. The supply voltage range is 4.5V to 5.5V, with a nominal voltage of 5V. This component finds application in industrial, automotive, and defense sectors where reliability and performance under demanding conditions are critical.
Additional Information
Series: 54C910RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 23.2400 |
| Width | 7.6200 |
| Technology | TTL |
| Access_Time_Max | 860.0000000000000000 |
| Additional_Feature | LG-MAX; WD-MAX |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 256.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 64X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 64.0000000000000000 |
| Number_of_Words_Code | 64 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | TS 16949 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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