MM2114N-3
Standard SRAM, 1KX4, 300ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments MM2114N-3 is a 4Kb asynchronous CMOS Static Random Access Memory (SRAM) organized as 1K words by 4 bits. Featuring a maximum access time of 300ns, this component operates within a temperature range of 0°C to 70°C and utilizes a standard 5V supply voltage (4.75V to 5.25V). The MM2114N-3 is housed in an 18-lead PDIP (Plastic Dual In-line Package) with through-hole termination. Its robust design, adhering to MIL-STD-883 Class B screening standards, makes it suitable for applications in industrial control systems, consumer electronics, and data acquisition equipment where reliable memory storage is paramount.
Additional Information
Series: MM2114RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 300.0000000000000000 |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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