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MM2114N

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MM2114N

Standard SRAM, 1KX4, 450ns, CMOS, PDIP18

Manufacturer: Texas Instruments

Categories: SRAMs

Quality Control: Learn More

Texas Instruments MM2114N is a 4096-bit CMOS static random-access memory device organized as 1024 words by 4 bits. This asynchronous SRAM features a maximum access time of 450ns and operates from a 5V supply, with a voltage range of 4.75V to 5.25V. The MM2114N is housed in an 18-pin PDIP (Plastic Dual In-line Package) with through-hole mounting. Its operating temperature range is 0°C to 70°C. This component adheres to MIL-STD-883 Class B screening. Applications for this memory component include industrial control systems, consumer electronics, and general-purpose embedded systems requiring reliable data storage.

Additional Information

Series: MM2114RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max450.0000000000000000
JESD_30_CodeR-PDIP-T18
Memory_Density4096.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization1KX4
Memory_Width4
Number_of_Functions1
Number_of_Terminals18
Number_of_Words1024.0000000000000000
Number_of_Words_Code1k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Screening_Level_Reference_StandardMIL-STD-883 Class B
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_PositionDual

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