M38510/23807BVX
Standard SRAM, 4KX1, 45ns, MOS, CDIP18Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments M38510-23807BVX is a standard asynchronous SRAM with a memory density of 4K words, organized as 4K x 1 bit. This MOS technology component offers a maximum access time of 45ns and operates over a temperature range of -55°C to 125°C. It features a 5V nominal supply voltage (4.5V to 5.5V range) and is housed in a 18-terminal ceramic, glass-sealed dual in-line package (DIP), code R-GDIP-T18, with through-hole mounting. Applications for this component are found in demanding environments within the aerospace and defense industries.
Additional Information
Series: M38510/23807RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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