BQ4310YSH-N70
Non-Volatile SRAM Module, 8KX8, 70ns, CMOSManufacturer: Texas Instruments
Categories: SRAMs
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The Texas Instruments BQ4310YSH-N70 is a non-volatile SRAM module with an 8K x 8 memory organization, providing 65,536 bits of storage. Featuring a CMOS technology and a 70 ns access time, this asynchronous parallel memory offers robust data retention capabilities. It operates within a supply voltage range of 4.5 V to 5.5 V and supports industrial temperature ranges from -40°C to +85°C. The component is presented in a rectangular microelectronic assembly package with gull-wing terminals, designed for surface mounting. Applications for this module are found in industrial control systems, data acquisition, and embedded systems requiring persistent data storage.
Additional Information
Series: BQ4310RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| JESD_30_Code | R-XDMA-G28 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM MODULE |
| Memory_Organization | 8KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Position | Dual |
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