BQ4015YMB-120N
Non-Volatile SRAM, 512KX8, 120ns, CMOS, PDIP32Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments BQ4015YMB-120N is a 512K x 8 Non-Volatile SRAM, providing 4 Megabits of data storage with a maximum access time of 120ns. This CMOS device operates from a 5V supply and features an 8-bit data bus. The BQ4015 series offers a unique combination of fast SRAM speed with non-volatile data retention, eliminating the need for external battery backup circuitry for data preservation during power loss. Its robust design supports operation across a wide temperature range from -40°C to +85°C. Packaged in a 32-lead PDIP (R-PDIP-T32) with through-hole termination and a 2.54mm terminal pitch, this component is suitable for applications requiring reliable data storage in demanding environments. Typical industries utilizing this type of memory include industrial automation, measurement and instrumentation, and telecommunications.
Additional Information
Series: BQ4015RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-PDIP-T32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP32,.6 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Standby_Current_Max | 0.005000000000000 |
| Supply_Current_Max | 115.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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