BQ4011YMA-200N
Non-Volatile SRAM, 32KX8, 200ns, CMOS, PDIP28Manufacturer: Texas Instruments
Categories: SRAMs
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Texas Instruments BQ4011YMA-200N is a 32K x 8 non-volatile Static Random-Access Memory (SRAM). This CMOS component offers an access time of 200ns, ensuring rapid data retrieval. Featuring a 32,768-word organization with 8-bit data width, it provides a total memory density of 262,144 bits. The BQ4011 series operates from a nominal supply voltage of 5V and is housed in a 28-lead PDIP package (R-PDIP-T28) with through-hole mounting. Its plastic epoxy package material and dual in-line style are suitable for industrial applications. This device is designed for applications requiring data retention in the absence of power, commonly found in industrial control systems, data logging, and embedded systems. The operating temperature range is from -40°C to 85°C, with a standby current of 4mA and a maximum supply current of 75mA.
Additional Information
Series: BQ4011RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 200.0000000000000000 |
| JESD_30_Code | R-PDIP-T28 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM |
| Memory_Organization | 32KX8 |
| Memory_Width | 8 |
| Number_of_Terminals | 28 |
| Number_of_Words | 32768.0000000000000000 |
| Number_of_Words_Code | 32k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP28,.6 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Standby_Current_Max | 0.004000000000000 |
| Supply_Current_Max | 75.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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