CSD25401Q3
MOSFET P-CH 20V 14A/60A 8VSONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD25401Q3 is a P-Channel MOSFET designed for efficient power management. This component features a 20V drain-source voltage rating and supports continuous drain currents of 14A at ambient temperature and 60A at case temperature. With a maximum power dissipation of 2.8W (Ta), it is suitable for thermal management in demanding applications. The CSD25401Q3 exhibits a low on-resistance of 11.7mOhm at 10A and 4.5V Vgs. It is packaged in an 8-VSON-CLIP (3.3x3.3) surface mount configuration, supplied on tape and reel. Key electrical parameters include a gate charge of 12.3 nC at 4.5V and input capacitance of 1400 pF at 10V. This MOSFET is utilized in various industrial applications, including power supplies and motor control systems. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V |
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