CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGAManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD25303W1015 is a P-Channel MOSFET designed for high-efficiency power management applications. This device offers a 20V drain-source voltage rating and a continuous drain current capability of 3A at 25°C (Tc). With a low on-resistance of 58mOhm maximum at 1.5A and 4.5V Vgs, it minimizes conduction losses. The CSD25303W1015 features a typical gate charge of 4.3nC at 4.5V Vgs and an input capacitance of 435pF maximum at 10V Vds. Its compact 6-DSBGA (1x1.5) package, a 6-UFBGA, DSBGA, supports surface mounting with a power dissipation of 1.5W (Ta). Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET is suitable for use in consumer electronics, computing, and industrial applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 10 V |
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