CSD25302Q2
MOSFET P-CH 20V 5A 6SONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD25302Q2 is a P-Channel MOSFET designed for demanding applications. This 20V device offers a continuous drain current of 5A at 25°C (Tc) with a maximum power dissipation of 2.4W (Ta). Featuring a low on-resistance of 49mOhm at 3A and 4.5V Vgs, it ensures efficient power transfer. The 6-SON package (6-SMD, Flat Leads) facilitates surface mounting and thermal management. Key specifications include a gate charge of 3.4 nC at 4.5V and an input capacitance of 350 pF at 10V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-SON |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 10 V |
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