CSD25301W1015
MOSFET P-CH 20V 2.2A 6DSBGAManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD25301W1015 is a P-Channel MOSFET designed for high-efficiency power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.2A at 25°C (Tc). The low on-resistance, specified as 75mOhm maximum at 1A and 4.5V Vgs, contributes to reduced conduction losses. With a gate charge of 2.5 nC at 4.5V Vgs, switching characteristics are optimized for efficient operation. The CSD25301W1015 is housed in a compact 6-DSBGA (1x1.5) package, suitable for surface mounting in space-constrained designs. Its operating temperature range of -55°C to 150°C (TJ) and a maximum power dissipation of 1.5W (Ta) make it suitable for use in portable electronics, power supplies, and battery management systems. The device supports gate drive voltages from 1.5V to 4.5V.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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