CSD25201W15
MOSFET P-CH 20V 4A 9DSBGAManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ P-Channel MOSFET, CSD25201W15, offers a 20V drain-source voltage and a continuous drain current of 4A at 25°C. This MOSFET features a low on-resistance of 40mOhm maximum at 2A, 4.5V, and a gate charge of 5.6 nC maximum at 4.5V. The CSD25201W15 is supplied in a compact 9-DSBGA package for surface mounting, supporting a maximum power dissipation of 1.5W. Operating across a temperature range of -55°C to 150°C, this device finds application in power management solutions across various industries including consumer electronics and industrial automation. The drive voltage range is specified from 1.8V to 4.5V, with a maximum gate-source voltage of -6V.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 9-DSBGA |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
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