CSD23201W10
MOSFET P-CH 12V 2.2A 4DSBGAManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Texas Instruments CSD23201W10 is a P-Channel NexFET™ MOSFET designed for demanding power management applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 2.2A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 82mOhm maximum at 500mA and 4.5V gate-source voltage (Vgs).
With a gate charge (Qg) of 2.4 nC maximum at 4.5V and input capacitance (Ciss) of 325 pF maximum at 6V, the CSD23201W10 offers efficient switching characteristics. It is housed in a compact 4-DSBGA (1x1) surface mount package, suitable for space-constrained designs. The MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). This component is frequently utilized in portable electronics and power supply circuits. The part is supplied on tape and reel.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-DSBGA (1x1) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 6 V |
Request a Quote
Clients Also Buy
CSD18543Q3A
MOSFET N-CH 60V 60A 8VSON
CSD18540Q5BT
MOSFET N-CH 60V 100A 8VSON
CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
