CSD19538Q2R
100-V, N CHANNEL NEXFET POWER MOManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 4.6A (Ta), 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
Additional Information
Series: NexFET™RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 13.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 20.2W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 6-WSON (2x2) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 454 pF @ 50 V |
| Qualification | - |
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