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CSD19536KTT

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CSD19536KTT

MOSFET N-CH 100V 200A DDPAK

Manufacturer: Texas Instruments

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 200A (Ta) 375W (Tc) Surface Mount TO-263 (DDPAK-3)

Additional Information

Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200A (Ta)
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-263 (DDPAK-3)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 50 V

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