CSD17313Q2Q1T
MOSFET N-CH 30V 5A 6WSONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD17313Q2Q1T is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C ambient. With a low on-resistance (Rds On) of 30mOhm maximum at 4A and 8V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 2.7nC at 4.5V and an input capacitance (Ciss) of 340pF maximum at 15V Vds. It supports drive voltages ranging from 3V to 8V and has a maximum gate-source voltage (Vgs) of +10V. The CSD17313Q2Q1T is housed in a compact 6-WSON (2x2) package with an exposed pad, suitable for surface mounting. Power dissipation is rated at 2.4W (Ta) and 17W (Tc), operating within a temperature range of -55°C to 150°C. This device finds application in power management solutions across various industries.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 17W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 6-WSON (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Vgs (Max) | +10V, -8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 15 V |
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