CSD17313Q2Q1
MOSFET N-CH 30V 5A 6WSONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Texas Instruments NexFET™ CSD17313Q2Q1 is a 30V N-Channel MOSFET designed for efficient power management applications. This component features a low Rds(on) of 30mOhm maximum at 4A and 8V, with a continuous drain current capability of 5A at 25°C. The device offers low gate charge (Qg) of 2.7 nC at 4.5V, facilitating faster switching speeds. Its 6-WSON (2x2) package with an exposed pad ensures excellent thermal performance, dissipating up to 2.3W at ambient temperature. With an operating temperature range of -55°C to 150°C, the CSD17313Q2Q1 is suitable for demanding environments in sectors such as automotive and industrial power systems. This component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 6-WSON (2x2) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Vgs (Max) | +10V, -8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 15 V |
| Qualification | - |
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