CSD16408Q5C
MOSFET N-CH 25V 22A/113A 8VSONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Texas Instruments NexFET™ CSD16408Q5C is an N-channel MOSFET designed for high-efficiency power conversion applications. This device features a 25 V drain-source voltage rating and a continuous drain current capability of 22 A at 25°C ambient and 113 A at 25°C case temperature. With a low on-resistance of 4.5 mOhm maximum at 25 A and 10 V, it minimizes conduction losses. The MOSFET utilizes a Metal Oxide technology and is housed in an 8-VSON-CLIP (5x6) package for efficient thermal management. Key parameters include a gate charge (Qg) of 8.9 nC at 4.5 V and input capacitance (Ciss) of 1300 pF at 12.5 V. It operates across a wide temperature range of -55°C to 150°C. The CSD16408Q5C is suitable for use in automotive, industrial, and computing power supply designs.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 113A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +16V, -12V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 12.5 V |
Request a Quote
Clients Also Buy
CSD18543Q3A
MOSFET N-CH 60V 60A 8VSON
CSD18540Q5BT
MOSFET N-CH 60V 100A 8VSON
CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
