CSD16325Q5C
MOSFET N-CH 25V 33A/100A 8VSONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments NexFET™ CSD16352Q5C is a 25V N-Channel MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 2mOhm at 30A and 8V Vgs, enabling reduced conduction losses. The continuous drain current is rated at 33A under typical ambient conditions (Ta) and 100A under continuous drain conditions at case temperature (Tc). With a maximum power dissipation of 3.1W (Ta), it is suitable for demanding thermal environments. The 8-VSON-CLIP (5x6) package offers a compact footprint for space-constrained designs. Key electrical parameters include a gate charge of 25 nC at 4.5V and input capacitance of 4000 pF at 12.5V. This MOSFET is engineered for use in automotive and industrial power management systems.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Vgs (Max) | +10V, -8V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 12.5 V |
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