CSD16323Q3C
MOSFET N-CH 25V 21A/60A 8SONManufacturer: Texas Instruments
Categories: Single FETs, MOSFETs
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Texas Instruments CSD16323Q3C NexFET™ N-Channel Power MOSFET, offering a 25V drain-source voltage and high continuous drain current capability of 21A (TA) and 60A (TC). This device features a low on-resistance of 4.5mOhm at 24A and 8V, with a gate charge of 8.4 nC at 4.5V. The CSD16323Q3C is packaged in an 8-SON-EP (3x3) surface-mount format, delivered on tape and reel. Its design supports drive voltages from 3V to 8V and has a maximum gate-source voltage rating of +10V and -8V. With a maximum power dissipation of 3W (TA) and an operating junction temperature range of -55°C to 150°C, this component is suitable for demanding applications in automotive and industrial power management systems.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 24A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SON-EP (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Vgs (Max) | +10V, -8V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 12.5 V |
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