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CSD13306W

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CSD13306W

MOSFET N-CH 12V 3.5A 6DSBGA

Manufacturer: Texas Instruments

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 12 V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Additional Information

Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UFBGA, DSBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs10.2mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id1.3V @ 250µA
Supplier Device Package6-DSBGA (1x1.5)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 6 V

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