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BQ4014YMB-120

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BQ4014YMB-120

IC NVSRAM 2MBIT PAR 32DIP MODULE

Manufacturer: Texas Instruments

Categories: Memory

Quality Control: Learn More

Texas Instruments BQ4014YMB-120 is a 2Mbit Non-Volatile SRAM (NVSRAM) memory component with a parallel interface. This device offers a 120 ns access time and a 120 ns write cycle time, providing reliable data retention without external components. The memory organization is 256K x 8. The BQ4014YMB-120 is housed in a 32-DIP Module package suitable for through-hole mounting and operates over a voltage range of 4.5V to 5.5V. Its temperature range is 0°C to 70°C. This component is utilized in applications requiring guaranteed data retention, such as industrial control systems, data logging, and telecommunications equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case32-DIP Module (0.61"", 15.49mm)
Mounting TypeThrough Hole
Memory Size2Mbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologyNVSRAM (Non-Volatile SRAM)
Memory FormatNVSRAM
Supplier Device Package32-DIP Module (18.42x52.96)
Write Cycle Time - Word, Page120ns
Memory InterfaceParallel
Access Time120 ns
Memory Organization256K x 8
ProgrammableNot Verified

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