BQ4014MB-120
IC NVSRAM 2MBIT PAR 32DIP MODULEManufacturer: Texas Instruments
Categories: Memory
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Texas Instruments BQ4014MB-120 is a 2Mbit Non-Volatile SRAM (NVSRAM) memory component featuring a parallel interface. This device offers a 120ns access time and a 120ns write cycle time, organized as 256K x 8. The BQ4014MB-120 operates from a supply voltage range of 4.75V to 5.5V and is specified for an operating temperature range of 0°C to 70°C. Supplied in a 32-DIP Module package, this component is suitable for through-hole mounting. The BQ4014MB-120 is utilized in applications requiring data retention without a continuous power supply, often found in industrial control systems, data acquisition, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-DIP Module (0.61"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.75V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-DIP Module (18.42x52.96) |
| Write Cycle Time - Word, Page | 120ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 256K x 8 |
| Programmable | Not Verified |
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