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BQ4011YMA-70N

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BQ4011YMA-70N

IC NVSRAM 256KBIT PARALLEL 28DIP

Manufacturer: Texas Instruments

Categories: Memory

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The Texas Instruments BQ4011YMA-70N is a 256Kbit Non-Volatile SRAM device featuring a parallel interface with an access time of 70 ns. This memory component, organized as 32K x 8, offers the benefits of SRAM speed with non-volatility, retaining data during power loss. It operates with a supply voltage range of 4.5V to 5.5V. The device is housed in a 28-DIP Module package, suitable for through-hole mounting. Its robust design supports an operating temperature range of -40°C to 85°C (TA). This memory solution is commonly employed in industrial, telecommunications, and consumer electronics applications requiring persistent data storage with high-speed access.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case28-DIP Module (0.61"", 15.49mm)
Mounting TypeThrough Hole
Memory Size256Kbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologyNVSRAM (Non-Volatile SRAM)
Memory FormatNVSRAM
Supplier Device Package28-DIP Module (18.42x37.72)
Write Cycle Time - Word, Page70ns
Memory InterfaceParallel
Access Time70 ns
Memory Organization32K x 8
ProgrammableNot Verified

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