BQ4011MA-200
IC NVSRAM 256KBIT PARALLEL 28DIPManufacturer: Texas Instruments
Categories: Memory
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The Texas Instruments BQ4011MA-200 is a 256Kbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface with an access time of 200 ns. Organized as 32K x 8, this component offers both fast read/write capabilities inherent to SRAM and data retention without external power, facilitated by its integrated lithium energy source. The BQ4011MA-200 is supplied in a 28-DIP Module package suitable for through-hole mounting and operates within a voltage range of 4.75V to 5.5V. This NVSRAM technology is utilized in applications requiring persistent data storage in industrial control systems, telecommunications equipment, and data logging. The write cycle time for this device is 200 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.61"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.75V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-DIP Module (18.42x37.72) |
| Write Cycle Time - Word, Page | 200ns |
| Memory Interface | Parallel |
| Access Time | 200 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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