BQ4011LYMA-70N
IC NVSRAM 256KBIT PARALLEL 28DIPManufacturer: Texas Instruments
Categories: Memory
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Texas Instruments BQ4011LYMA-70N is a 256Kbit Non-Volatile SRAM memory device. This parallel interface component offers an access time of 70 ns, with a memory organization of 32K x 8. The BQ4011LYMA-70N operates within a 3V to 3.6V supply voltage range and features a write cycle time of 70 ns. Designed for through-hole mounting, it is housed in a 28-DIP Module package (0.61", 15.49mm). This NVSRAM technology is utilized in applications requiring data retention without continuous power, commonly found in industrial and telecommunications equipment. The operating temperature range for this device is -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.61"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-DIP Module (18.42x37.72) |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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