BQ4010MA-150
IC NVSRAM 64KBIT PARALLEL 28DIPManufacturer: Texas Instruments
Categories: Memory
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Texas Instruments BQ4010MA-150 NVSRAM (Non-Volatile SRAM) memory device. This component features a 64Kbit memory organization, arranged as 8K x 8, with a parallel interface and a maximum access time of 150 ns. The BQ4010MA-150 operates from a supply voltage range of 4.75V to 5.5V. Designed for through-hole mounting, it is supplied in a 28-DIP Module package. This technology combines the speed of SRAM with the non-volatility of EEPROM, making it suitable for applications requiring data retention during power loss. Typical industries utilizing this component include industrial control systems and data logging applications. The write cycle time is also specified at 150ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.61"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 64Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.75V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-DIP Module (18.42x37.72) |
| Write Cycle Time - Word, Page | 150ns |
| Memory Interface | Parallel |
| Access Time | 150 ns |
| Memory Organization | 8K x 8 |
| Programmable | Not Verified |
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