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TMS29LF004B-120BDCDQ

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TMS29LF004B-120BDCDQ

Flash, 512KX8, 120ns, PDSO40

Manufacturer: Texas Instruments

Categories: Flash Memories

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Texas Instruments TMS29LF004B-120BDCDQ is a 4 Mbit NOR Flash memory device from the TMS29LF004 series. This component features a memory organization of 512K words by 8 bits, providing a total memory density of 4194304 bits. It operates asynchronously with a maximum access time of 120 ns. The device supports a supply voltage range of 2.7V to 3.6V, with a nominal voltage of 3.3V. Programming is supported at 3V. The TMS29LF004B-120BDCDQ is housed in a 40-terminal PDSO package (R-PDSO-G40) with a terminal pitch of 0.500 mm, designed for surface mounting. Its operating temperature range is from -40°C to +125°C. This Flash memory is suitable for applications in industrial automation, consumer electronics, and telecommunications.

Additional Information

Series: TMS29LF004RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4000
TypeNOR TYPE
Width10.0000
TechnologyMOS
Access_Time_Max120.0000000000000000
Boot_BlockBottom
JESD_30_CodeR-PDSO-G40
Memory_Density4194304.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals40
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP1
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Programming_Voltage3
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min2.70000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.500
Terminal_PositionDual

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