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TMS28F800ALYB10CDBJQ

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TMS28F800ALYB10CDBJQ

Flash, 1MX8, 100ns, PDSO44

Manufacturer: Texas Instruments

Categories: Flash Memories

Quality Control: Learn More

The Texas Instruments TMS28F800ALYB10CDBJQ is a high-performance NOR Flash memory device offering 8 Mbits of storage. This component features a memory organization of 1M x 8, providing a 100ns access time. Designed for demanding applications, it operates asynchronously and supports a bottom boot block configuration. The device is packaged in a 44-lead, 1.27mm pitch plastic small outline (SOP) package, identified by JESD-30 code R-PDSO-G44. It operates within a temperature range of -40°C to 125°C and supports a supply voltage from 4.5V to 5.5V, with a nominal 5V. Typical applications include industrial control systems, automotive electronics, and telecommunications infrastructure where reliable, high-density non-volatile memory is critical. The TMS28F800 series is known for its robust endurance and data retention capabilities.

Additional Information

Series: TMS28F800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length28.2000
TypeNOR TYPE
Width13.3000
TechnologyCMOS
Access_Time_Max100.0000000000000000
Additional_FeatureBOTTOM BOOT BLOCK
Boot_BlockBottom
JESD_30_CodeR-PDSO-G44
Memory_Density8388608.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization1MX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max2.6250
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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